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Functionalised Activated Sapphire Thin-disk (FAST)broad

FAST · Horizon Europe grant · 2026-07-01–2029-06-30

EC contribution

€2,997,897

Total cost

€2,997,897

Beneficiaries

5
About the data

Source: CORDIS (official EU open data), Horizon Europe. Framework HORIZON · call HORIZON-EIC-2025-PATHFINDEROPEN · scheme HORIZON-EIC · topic HORIZON-EIC-2025-PATHFINDEROPEN. CORDIS record →

Objective

Optical materials are indispensable for modern society reliant upon technology to create and share information, fabricate advanced materials, and study the intricacies of our physical universe. Our Pathfinder science-to-technology breakthrough targets a paradigm shift for fabricating a novel optically active crystal – rare-earth (RE) doped sapphire. Sapphire is an exemplary material, second only to diamond in the Mohs hardness scale and 3rd in the list of the hardest natural minerals – importantly, 1st in this list that can incorporate RE ions into its lattice. In adopting a radically different non-thermal-equilibrium crystal-growth method, namely Rapid Pulsed Laser Deposition (RPLD) we capitalise on an order-of-magnitude higher deposition frequency than regular PLD and, in addition, exploit the ability to incorporate substantially more RE impurity than conventional crystal-growth techniques can achieve. With practically relevant doping concentrations RE-doped sapphire (REDS) promises a step change in critical properties for laser gain elements, especially Yb:sapphire thin disks. A greater than tenfold improvement in laser power is anticipated in like-for-like replacement of a state-of-the-art Yb:YAG thin disk with a Yb:sapphire one. However, we propose additional science-to-technology breakthroughs that will potentially offer a further order-of-magnitude performance enhancement. The first addresses Amplified Spontaneous Emission (ASE), a limit to power scaling thin-disk lasers, whereby we will nanoengineer key surfaces of the active elements to functionalise them and control their optical properties. Functionalising the activated sapphire promises ASE mitigation and aperture scaling opportunities for a new generation of thin-disk gain elements in extreme-power photon engines. FAST lasers, will open new technological opportunities in space science, high-value manufacturing, and transform future directions for laser technology for the rest of the 21st C.

Beneficiaries (5)

OrganisationCountryRoleEC contributionSME
UNIVERSITY OF SOUTHAMPTON UK coordinator €1,280,367
UNIVERSITY OF STUTTGART DE participant €963,812
UNIVERZITA KARLOVA CZ participant €329,842
UAB OPTOMENAS LT participant €290,750
AMPLITUDE FR participant €133,125 Yes

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