Capability
Radiation-Hardened and Gallium Nitride (GaN) Microelectronics as a Tactical Capability Priority
What capability problem does Radiation-Hardened and Gallium Nitride (GaN) Microelectronics as a Tactical Capability Priority address for European deterrence, readiness and strategic autonomy?
Radiation-hardened and Gallium Nitride (GaN) microelectronics represent a foundational enabling capability for modern defence systems operating in space.
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Platform publication · DFM Analysis report · 2026-06-13
Radiation-hardened and Gallium Nitride (GaN) microelectronics represent a foundational enabling capability for modern defence systems operating in space, high-altitude environments, and high-energy electromagnetic conditions. Many of the Alliance’s most advanced military functions—satellite communications, missile warning, radar sensing, electronic warfare, and precision strike—depend on semiconductor devices capable of operating reliably under radiation exposure and extreme power or thermal stress.
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Radiation-Hardened and Gallium Nitride (GaN) Microelectronics as a Tactical Capability Priority
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Radiation-Hardened and Gallium Nitride (GaN) Microelectronics as a Tactical Capability Priority
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Radiation-hardened and Gallium Nitride (GaN) microelectronics represent a foundational enabling capability for modern defence systems operating in space, high-altitude environments…
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