Next-Generation Indium Gallium Nitride Micro LEDsbroad
InGaNious · Horizon Europe grant · 2023-02-01–2025-06-30
EC contribution
Total cost
Beneficiaries
About the data
Source: CORDIS (official EU open data), Horizon Europe. Framework HORIZON · call HORIZON-EIC-2022-ACCELERATOR-01 · scheme HORIZON-EIC-ACC-BF · topic HORIZON-EIC-2022-ACCELERATOROPEN-01. CORDIS record →
Objective
Our method of growing pure InGaN μLEDs is completely unique. We start with a layer of thin GaN on a substrate. This layer has the same high defect density that other existing technologies struggle with. Then we add a mask made of either silicon nitride or aluminum oxide introduced by us using a high-resolution lithography process. The mask contains tiny holes ca. 100 nm in diameter which become growth sites for intrinsically defect-free InGaN pyramids. These pyramids are then reshaped into truncated hexagonal pyramids, aka InGaN platelets that are just 700 nm wide (effectively a nanoLED) and contain the active micro LED structure after regrowth on the top c-plane of the InGaN platelets.We can already grow the μLEDs on 2” wafers on a sapphire substrate, and we are developing new methods to grow 4” wafers on a silicon substrate. Our KPIs (pixel size <1 µm, internal quantum efficiency >3.5%, FWHM <50 nm, etc.) already outcompete current commercial options for sub-2 µm-pixel size.
Beneficiaries (1)
| Organisation | Country | Role | EC contribution | SME |
|---|---|---|---|---|
| HEXAGEM AB | SE | coordinator | €2,230,784 | Yes |
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