Full qualification, testing and commercial deployment of a unique on-chip memory technology offering the highest-density embedded memory in a standard CMOS processbroad
GCRAM · Horizon Europe grant · 2024-07-01–2026-06-30
EC contribution
Total cost
Beneficiaries
About the data
Source: CORDIS (official EU open data), Horizon Europe. Framework HORIZON · call HORIZON-EIC-2024-ACCELERATOR-02 · scheme HORIZON-EIC-ACC · topic HORIZON-EIC-2024-ACCELERATOROPEN-01. CORDIS record →
Objective
The Memory Bottleneck has become a major concern in modern Systems-on-a-Chip and hence, the size of on-chip embedded memory continues to increase, already reaching up to 75% of the total SoC real estate. However, the industry standard SRAM technology is very area-inefficient and has been facing major scaling difficulties in modern process technologies (beyond 10nm).RAAAM’s Gain-Cell Random Access Memory (GCRAM) technology is a unique on-chip memory solution that only requires 2-3 transistors to store a bit of data, as opposed to 6-8 transistors needed for the existing SRAM-based highest-density memory technology. The solution is area efficient, cost-effective and can be manufactured using the standard CMOS process. Having successfully tested the technology in various nodes ranging from 180nm-16nm, RAAAM currently aims to develop, fabricate, and characterize the proposed memory technology for nodes ≤5nm and to fully qualify it for production according to industry standards
Beneficiaries (1)
| Organisation | Country | Role | EC contribution | SME |
|---|---|---|---|---|
| RAAAM MEMORY TECHNOLOGIES LTD | IL | coordinator | €2,499,999 | Yes |
Get the DFM funding briefing — free
New EU defence calls, tenders and awards in your inbox.
Defence Finance Monitor is an analytical and informational product. Grant data is official CORDIS; payment and subscription happen on DFM Analysis.